FCD7N60TM
Manufacturer:
On Semiconductor
Mfr.Part #:
FCD7N60TM
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 83 W 600 V Continuous Drain Current (ID):7 A 30 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 600 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 600 MΩ |
| Height | 2.39 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 7 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 83 W |
| Power Dissipation | 83 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 920 pF |
| Continuous Drain Current (ID) | 7 A |
| Rds On Max | 600 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 35 ns |
| Turn-Off Delay Time | 75 ns |
| Element Configuration | Single |
| Fall Time | 32 ns |
| Rise Time | 55 ns |
| Dual Supply Voltage | 600 V |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 530 mΩ |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
Stock: 6
Distributors
pcbx
pcbxUnit Price$2.16307
Ext.Price$2.16307
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.16307 | $2.16307 |
| 10 | $2.12160 | $21.21600 |
| 25 | $2.04161 | $51.04025 |
| 50 | $1.96464 | $98.23200 |
| 100 | $1.89053 | $189.05300 |